NVH4L080N120SC1

Category : Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs

FET Feature : -

Vgs(th) (Max) @ Id : 4.3V @ 5mA

Operating Temperature : -55°C ~ 175°C (TJ)

Package / Case : TO-247-4

Gate Charge (Qg) (Max) @ Vgs : 56 nC @ 20 V

Rds On (Max) @ Id, Vgs : 110mOhm @ 20A, 20V

FET Type : N-Channel

Drive Voltage (Max Rds On, Min Rds On) : 20V

Package : Tube

Drain to Source Voltage (Vdss) : 1200 V

Vgs (Max) : +25V, -15V

Product Status : Active

Input Capacitance (Ciss) (Max) @ Vds : 1670 pF @ 800 V

Mounting Type : Through Hole

Series : Automotive, AEC-Q101

Supplier Device Package : TO-247-4L

Mfr : onsemi

Current - Continuous Drain (Id) @ 25°C : 29A (Tc)

Power Dissipation (Max) : 170mW (Tc)

Technology : SiCFET (Silicon Carbide)

Base Product Number : NVH4L080

Description : SICFET N-CH 1200V 29A TO247-4